FEBS Letters
Volume 582, Issue 27 , Pages 3776-3782, 12 November 2008

Robustness analysis of cellular memory in an autoactivating positive feedback system

Edited by Robert B. Russell

National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China

Received 19 February 2008; received in revised form 26 September 2008; accepted 6 October 2008. published online 17 October 2008.

Abstract 

Cellular memory is a ubiquitous phenomenon in cell biology. Using numerical simulation and theoretical analysis, we explored the robustness of cellular memory to intrinsic noise in a transcriptional positive feedback system. Without noise, the system could create two stable steady states and function as a memory module. Memory robustness index and mean first-passage time were used to quantify the robustness of memory. Large cell size and strong cooperativity in binding enhanced memory storage remarkably. Adding a second positive feedback loop improved persistent memory significantly, whereas including a negative one destabilized memory storage. These are consistent with experimental observations. We interpret why positive feedback loops are actively involved in epigenetic memory from a dynamical systems perspective.

Keywords: Cellular memory, Autoactivating positive feedback system, Robustness analysis, Cell size, Cooperativity in binding, Interlinked feedback loop

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PII: S0014-5793(08)00822-3

doi:10.1016/j.febslet.2008.10.005

FEBS Letters
Volume 582, Issue 27 , Pages 3776-3782, 12 November 2008